Structural, Optical, and Electrical Properties of Copper Oxide Films Grown by the SILAR Method with Post-Annealing

Copper oxides are widely used in photocatalysts, sensors, batteries, optoelectronic, and electronic devices. In order to obtain different material properties meet the requirements of application fields, varied technologies process conditions prepare copper oxides. this work, oxide films were grown on glass substrates by a successive ionic layer adsorption reaction (SILAR) method with subsequent annealing under an atmospheric environment. The characterized using X-ray diffractometer, Raman spectrometer, Scanning electron microscope, UV-Visible-NIR spectrophotometer, Hall Effect measurement. results show that as-deposited film has Cu2O crystal structure, which begins transform into Cu2O-CuO mixed CuO structure after at 300 °C for period time, resulting bandgap being reduced from 1.90 1.34 eV. not only affected post-annealing temperature but also resistivity, carrier concentration, mobility conditions. addition, shows high 93.7 cm2·V−1·s−1 low concentration 1.8 × 1012 cm−3 due formation heterojuction.